mbr4035pt thru mbr4060pt www.vishay.com vishay general semiconductor revision: 21-nov-12 1 document number: 88679 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dual common-cathode schottky rectifier features ? guardring for overvoltage protection ? lower power losses, high efficiency ? low forward voltage drop ? high forward surge capability ? high frequency operation ? solder dip 275 c max. 10 s, per jesd 22-b106 ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 typical applications for use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc/dc converters or polarity protection application. mechanical data case: to-247ad (to-3p) molding compound meets ul 94v-0 flammabi lity rating ? base p/n-e3 - rohs-compliant, commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? e3 suffix meets jesd 2 01 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum note (1) 2.0 s pulse width, f = 1.0 khz primary characteristics i f(av) 40 a v rrm 35 v to 60 v i fsm 400 a v f 0.60 v, 0.62 v t j max. 150 c pin 1 pin 3 case pin 2 to-247ad (to-3p) 1 2 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol mbr4035pt mbr4045pt mbr4050pt mbr4060pt unit maximum repetitive pe ak reverse voltage v rrm 35 45 50 60 v maximum working peak reverse voltage v rwm 35 45 50 60 v maximum dc blocking voltage v dc 35 45 50 60 v maximum average forward rectified current t c = 125 c i f(av) 40 a peak forward surge current 8.3 ms single half sine-wave superimposed on ra ted load per diode i fsm 400 a peak repetitive reverse surge current per diode i rrm (1) 2.0 1.0 a voltage rate of change (rated v r ) dv/dt 10 000 v/s operating junction temperature range t j - 65 to + 150 c storage temperature range t stg - 65 to + 175 c
mbr4035pt thru mbr4060pt www.vishay.com vishay general semiconductor revision: 21-nov-12 2 document number: 88679 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse test: 300 s pulse width, 1 % duty cycle ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current derating curve fig. 2 - maximum non-repetitve peak forward surge current per diode electrical characteristics (t a = 25 c unless otherwise noted) parameter symbol test conditions mbr4035pt mbr4045pt mbr4050pt mbr4060pt unit maximum instantaneous forward voltage per diode v f (1) i f = 20 a t j = 25 c 0.70 0.72 v i f = 20 a t j = 125 c 0.60 0.62 i f = 40 a t j = 25 c 0.80 - i f = 40 a t j = 125 c 0.75 - maximum instantaneous reverse current at rated dc blocking voltage per diode i r (1) t j = 25 c 1.0 ma t j = 125 c 100 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol mbr4035pt mbr4045pt mbr4050pt mbr4060pt unit thermal resistance, junction to case per diode r ? jc 1.2 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode to-247ad mbr4045pt-e3/45 6.13 45 30/tube tube 0 50 100 150 0 10 20 30 40 50 a v erage for w ard c u rrent (a) case temperat u re (c) resisti v e or ind u cti v e load 1 10 100 100 200 300 400 nu mber of cycles at 60 hz peak for w ard s u rge c u rrent (a) t j = t j max. 8.3 ms single half sine-wa v e
mbr4035pt thru mbr4060pt www.vishay.com vishay general semiconductor revision: 21-nov-12 3 document number: 88679 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - typical instantaneous forward characteristics per diode fig. 4 - typical reverse characteristics per diode fig. 5 - typical junction capacitance per diode fig. 6 - typical transient ther mal impedance per diode package outline dimensions in inches (millimeters) 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 mbr4035pt - mbr4045pt mbr4050pt & mbr4060pt t j = 150 c t j = 25 c p u lse width = 300 s 1 % d u ty cycle instantaneo u s for w ard voltage (v) instantaneo u s for w ard c u rrent (a) 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 t j = 125 c t j = 25 c t j = 75 c percent of rated peak re v erse voltage (%) instantaneo u s re v erse c u rrent (ma) mbr4035pt - mbr4045pt mbr4050pt & mbr4060pt 0.1 1 10 100 100 1000 10 000 re v erse voltage (v) j u nction capacitance (pf) mbr4035pt - mbr4045pt mbr4050pt & mbr4060pt t j = 25 c f = 1.0 mhz v sig = 50 mvp-p 0.01 0.1 1 10 100 0.1 1 10 100 t - p u lse d u ration (s) transient thermal impedance (c/w) pi n 1 pi n 3 case pi n 2 to-247ad (to-3p) 0.245 (6.2) 0.225 (5.7) 0.645 (16.4) 0.625 (15.9) 0.323 (8.2) 0.313 (7.9) 0.142 (3.6) 0.138 (3.5) 0.170 (4.3) 0.086 (2.18) 0.076 (1.93) 0.160 (4.1) 0.140 (3.5) 0.225 (5.7) 0.205 (5.2) 0.127 (3.22) 0.117 (2.97) 0.048 (1.22) 0.044 (1.12) 0.795 (20.2) 0.775 (19.6) 0.840 (21.3) 0.820 (20.8) 1 2 3 0.078 (1.98) ref. 0.203 (5.16) 0.193 (4.90) 10 typ. both sides 30 10 1 ref. both sides 0.030 (0.76) 0.020 (0.51) 0.118 (3.0) 0.108 (2.7)
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